Справочник MOSFET. APT20M45BVFR

 

APT20M45BVFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M45BVFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 56 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 980 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT20M45BVFR

 

 

APT20M45BVFR Datasheet (PDF)

 ..1. Size:94K  apt
 apt20m45bvfr.pdf

APT20M45BVFR APT20M45BVFR

APT20M45BVFR200V 56A 0.045POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:375K  inchange semiconductor
 apt20m45bvfr.pdf

APT20M45BVFR APT20M45BVFR

isc N-Channel MOSFET Transistor APT20M45BVFRFEATURESDrain Current I = 56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 4.1. Size:92K  apt
 apt20m45bvr.pdf

APT20M45BVFR APT20M45BVFR

APT20M45BVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.2. Size:375K  inchange semiconductor
 apt20m45bvr.pdf

APT20M45BVFR APT20M45BVFR

isc N-Channel MOSFET Transistor APT20M45BVRFEATURESDrain Current I =56A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.045(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:97K  apt
 apt20m45svfr.pdf

APT20M45BVFR APT20M45BVFR

APT20M45SVFR200V 56A 0.045POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 6.2. Size:95K  apt
 apt20m45svr.pdf

APT20M45BVFR APT20M45BVFR

APT20M45SVR200V 56A 0.045POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower L

Другие MOSFET... APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR , APT20M42HVR , IRF3205 , APT20M45BVR , APT20M45SVFR , APT20M45SVR , APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR , APT30M40LVFR .

 

 
Back to Top