APT30M19JVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT30M19JVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 700 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 33 nS
Cossⓘ - Capacitancia de salida: 3250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
Encapsulados: SOT227
Búsqueda de reemplazo de APT30M19JVR MOSFET
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APT30M19JVR datasheet
apt30m19jvr.pdf
APT30M19JVR 300V 130A 0.019 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche
apt30m19jvfr.pdf
APT30M19JVFR 300V 130A 0.019 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ISOTOP Fast Recovery Body Diode 100% Avalanche
apt30m17jll.pdf
APT30M17JLL 300V 135A 0.017W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's
apt30m17jfll.pdf
APT30M17JFLL 300V 135A 0.017 R POWER MOS 7 FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 combines lower conduction and switching losses "UL Recognized" along with exceptiona
Otros transistores... APT20M38SVR, APT20M40BVR, APT20M42HVR, APT20M45BVFR, APT20M45BVR, APT20M45SVFR, APT20M45SVR, APT30M19JVFR, IRF540, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR, APT30M70BVFR, APT30M70BVR, APT30M85BVFR, APT30M85BVR
History: SPA17N80C3
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