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APT30M19JVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APT30M19JVR

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 700 W

Предельно допустимое напряжение сток-исток (Uds): 300 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Пороговое напряжение включения Ugs(th): 4 V

Максимально допустимый постоянный ток стока (Id): 130 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 33 ns

Выходная емкость (Cd): 3250 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.019 Ohm

Тип корпуса: SOT227

Аналог (замена) для APT30M19JVR

 

 

APT30M19JVR Datasheet (PDF)

1.1. apt30m19jvfr.pdf Size:76K _apt

APT30M19JVR
APT30M19JVR

APT30M19JVFR 300V 130A 0.019Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. ISOTOP® • Fast Recovery Body Diode • 100% Avalanche

1.2. apt30m19jvr.pdf Size:74K _apt

APT30M19JVR
APT30M19JVR

APT30M19JVR 300V 130A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP® • Faster Switching • 100% Avalanche

 3.1. apt30m17jfll.pdf Size:167K _update_mosfet

APT30M19JVR
APT30M19JVR

APT30M17JFLL Ω 300V 135A 0.017Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptiona

3.2. apt30m17jll.pdf Size:69K _apt

APT30M19JVR
APT30M19JVR

APT30M17JLL 300V 135A 0.017W TM POWER MOS 7 Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's

 3.3. apt30m17jfll.pdf Size:167K _apt

APT30M19JVR
APT30M19JVR

APT30M17JFLL Ω 300V 135A 0.017Ω Ω Ω Ω R POWER MOS 7 FREDFET Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses "UL Recognized" along with exceptiona

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