STP60NS04ZB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STP60NS04ZB
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO220

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STP60NS04ZB Datasheet (PDF)

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STP60NS04ZBN-CHANNEL CLAMPED 10m - 60ATO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04ZB CLAMPED

4.1. Size:317K st
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STP60NS04ZN-CHANNEL CLAMPED 10m - 60A TO-220FULLY PROTECTED MESH OVERLAY MOSFETTYPE VDSS RDS(on) IDSTP60NS04Z CLAMPED

8.1. Size:514K st
stb60nf06lt4 stb60nf06l stp60nf06l stp60nf06lfp stp60nf06lfp.pdf pdf_icon

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

8.2. Size:747K st
std60n3lh5 stp60n3lh5 stu60n3lh5 stu60n3lh5-s stu60n3lh5-s.pdf pdf_icon

STD60N3LH5, STP60N3LH5STU60N3LH5, STU60N3LH5-SN-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220STripFET V Power MOSFETFeaturesOrder codes VDSS RDS(on) max ID3STD60N3LH5 30 V 0.008 48 A 213STP60N3LH5 30 V 0.0084 48 A 21IPAKTO-220STU60N3LH5 30 V 0.0084 48 ASTU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark32 Extr

8.3. Size:265K st
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STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - T0-220STripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

8.4. Size:324K st
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STP60NH2LLN-channel 24V - 0.010 - 40A TO-220STripFET Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)STP60NH2LL 24V

8.5. Size:77K st
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STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

8.6. Size:240K st
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STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

8.7. Size:342K st
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STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

8.9. Size:279K st
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STP60NF06N-channel 60V - 0.014 - 60A TO-220STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06 60V

8.10. Size:514K st
stb60nf06l stp60nf06l stp60nf06lfp.pdf pdf_icon

STB60NF06LSTP60NF06L - STP60NF06LFPN-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB60NF06L 60V

8.11. Size:386K st
std60n3lh5 stp60n3lh5 stu60n3lh5.pdf pdf_icon

STD60N3LH5STP60N3LH5, STU60N3LH5N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220STripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD60N3LH5 30 V 0.008 48 A 32STP60N3LH5 30 V 0.0084 48 A1STU60N3LH5 30 V 0.0084 48 ATO-220 RDS(on) * Qg industry benchmark3 Extremely low on-resistance RDS(on) 3211 Very low switching gate charge

8.12. Size:303K st
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STP60NE03L-10N - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE03L-10 30 V

8.13. Size:342K st
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STP60NE06-16STP60NE06-16FPN-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP"SINGLE FEATURE SIZE" POWER MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTP60NE06-16 60 V

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STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE" SINGLE FEATURE SIZE " POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

8.16. Size:54K st
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STP60N05-14STP60N06-14N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTP60N05-14 50 V

8.17. Size:354K st
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www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

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STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAKSINGLE FEATURE SIZE POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

8.19. Size:348K st
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STP60NE10STP60NE10FPN - CHANNEL 100V - 0.016 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE10 100 V

8.20. Size:259K st
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STP60NF03LN-channel 30V - 0.008 - 60A TO-220STripFET Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF03L 30V

8.21. Size:54K st
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STP60NE03L-12N - CHANNEL 30V - 0.009 - 60A - TO-220 STripFET " POWER MOSFET PRELIMINARY DATATYPE VDSS RDS(on) IDSTP60NE03L-12 30 V

8.22. Size:277K st
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STP60NF06FPN-channel 60V - 0.014 - 30A TO-220FPSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP60NF06FP 60V

8.23. Size:353K st
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STP60NE06L-16STP60NE06L-16FPN - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FPSTripFET POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06L-16 60 V

8.24. Size:120K st
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STP60NE06-16STP60NE06-16FPN - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETTYPE VDSS RDS(on) IDSTP60NE06-16 60 V

8.25. Size:624K st
stb60n55f3 std60n55f3 stf60n55f3 sti60n55f3 stu60n55f3 stp60n55f3.pdf pdf_icon

STB60N55F3, STD60N55F3, STF60N55F3STI60N55F3, STP60N55F3, STU60N55F3N-channel 55 V, 6.5 m, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220TO-220FP STripFET III Power MOSFETFeaturesType VDSS RDS(on) ID Pw332131STB60N55F3 55V

8.26. Size:364K st
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STB60NF10STB60NF10-1 - STP60NF10N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAKSTripFET II Power MOSFETGeneral featuresVDSS Type RDS(on) ID(@Tjmax)3312STB60NF10 100V

8.27. Size:724K cn vbsemi
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STP60NF06FPwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.010 at VGS = 10 V 60 Material categorization:600.012 at VGS = 4.5 V 50TO-220 FULLPAKDGSD SGTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Para

8.28. Size:838K cn vbsemi
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STP60N3LH5www.VBsemi.twN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 30 Package with low thermal resistanceRDS(on) () at VGS = 10 V 0.0075 100 % Rg and UIS testedRDS(on) () at VGS = 4.5 V 0.0095ID (A) 70Configuration SinglePackage TO-220AB/ TO-263TO-220AB DTO-263GSG D SN-Channel MOSFETG D STop View

8.29. Size:205K inchange semiconductor
stp60nf06l.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06LFEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

8.30. Size:230K inchange semiconductor
stp60nf10.pdf pdf_icon

INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP60NF10FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching mode power suppliesGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)

8.31. Size:259K inchange semiconductor
stp60ne06-16.pdf pdf_icon

isc N-Channel MOSFET Transistor STP60NE06-16FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

8.32. Size:228K inchange semiconductor
stp60n06-14.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60N06-14FEATURESWith low gate drive requirementsEasy to driveHigh current capability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =25

8.33. Size:201K inchange semiconductor
stp60nf06fp.pdf pdf_icon

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP60NF06FPFEATURESTypical R (on)=0.08DSWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSolenold and relay dirversDC-DC convertersAutomotive environmentABSOLUTE MAXIMUM RATINGS(T =

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