STP60NS04ZB - описание и поиск аналогов

STP60NS04ZB N-CHANNEL CLAMPED 10m - 60ATO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP60NS04ZB CLAMPED

STP60NS04Z N-CHANNEL CLAMPED 10m - 60A TO-220 FULLY PROTECTED MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID STP60NS04Z CLAMPED

STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB60NF06L 60V

STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes VDSS RDS(on) max ID 3 STD60N3LH5 30 V 0.008 48 A 2 1 3 STP60N3LH5 30 V 0.0084 48 A 2 1 IPAK TO-220 STU60N3LH5 30 V 0.0084 48 A STU60N3LH5-S 30 V 0.0084 48 A RDS(on) * Qg industry benchmark 3 2 Extr

STP60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - T0-220 STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-12 30 V

STP60NH2LL N-channel 24V - 0.010 - 40A TO-220 STripFET Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP60NH2LL 24V

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V

STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06L-16 60 V

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V

STP60NF06 N-channel 60V - 0.014 - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP60NF06 60V

STB60NF06L STP60NF06L - STP60NF06LFP N-channel 60V - 0.012 - 60A - TO-220/D2PAK/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STB60NF06L 60V

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 , 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD60N3LH5 30 V 0.008 48 A 3 2 STP60N3LH5 30 V 0.0084 48 A 1 STU60N3LH5 30 V 0.0084 48 A TO-220 RDS(on) * Qg industry benchmark 3 Extremely low on-resistance RDS(on) 3 2 1 1 Very low switching gate charge

STP60NE03L-10 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE03L-10 30 V

STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type VDSS RDS(on) ID STP60NE06-16 60 V

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V

STP60N05-14 STP60N06-14 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STP60N05-14 50 V

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STP60NE06L-16 N - CHANNEL 60V - 0.014 - 60A - D2PAK SINGLE FEATURE SIZE POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE06L-16 60 V

STP60NE10 STP60NE10FP N - CHANNEL 100V - 0.016 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE10 100 V

STP60NF03L N-channel 30V - 0.008 - 60A TO-220 STripFET Power MOSFET General features Type VDSS RDS(on) ID STP60NF03L 30V

STP60NE03L-12 N - CHANNEL 30V - 0.009 - 60A - TO-220 STripFET " POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP60NE03L-12 30 V

STP60NF06FP N-channel 60V - 0.014 - 30A TO-220FP STripFET II Power MOSFET General features Type VDSS RDS(on) ID STP60NF06FP 60V

STP60NE06L-16 STP60NE06L-16FP N - CHANNEL 60V - 0.014 - 60A TO-220/TO-220FP STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06L-16 60 V

STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET TYPE VDSS RDS(on) ID STP60NE06-16 60 V

STB60N55F3, STD60N55F3, STF60N55F3 STI60N55F3, STP60N55F3, STU60N55F3 N-channel 55 V, 6.5 m , 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET III Power MOSFET Features Type VDSS RDS(on) ID Pw 3 3 2 1 3 1 STB60N55F3 55V

STB60NF10 STB60NF10-1 - STP60NF10 N-channel 100V - 0.019 - 80A - TO-220 - D2PAK - I2PAK STripFET II Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) 3 3 1 2 STB60NF10 100V

STP60NF06FP www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Para

STP60N3LH5 www.VBsemi.tw N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 30 Package with low thermal resistance RDS(on) ( ) at VGS = 10 V 0.0075 100 % Rg and UIS tested RDS(on) ( ) at VGS = 4.5 V 0.0095 ID (A) 70 Configuration Single Package TO-220AB/ TO-263 TO-220AB D TO-263 G S G D S N-Channel MOSFET G D S Top View

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60NF06L FEATURES With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

INCHANGE Semiconductor isc N-Channel Mosfet Transistor STP60NF10 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 )

isc N-Channel MOSFET Transistor STP60NE06-16 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60N06-14 FEATURES With low gate drive requirements Easy to drive High current capability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP60NF06FP FEATURES Typical R (on)=0.08 DS With low gate drive requirements Easy to drive 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Solenold and relay dirvers DC-DC converters Automotive environment ABSOLUTE MAXIMUM RATINGS(T =