APT30M85BVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: APT30M85BVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 700 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: TO247

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APT30M85BVFR Datasheet (PDF)

..1. Size:69K apt
apt30m85bvfr.pdf

APT30M85BVFR300V 40A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

4.1. Size:64K apt
apt30m85bvr.pdf

APT30M85BVR300V 40A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

4.2. Size:376K inchange semiconductor
apt30m85bvr.pdf

isc N-Channel MOSFET Transistor APT30M85BVRFEATURESDrain Current I =40A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

6.1. Size:69K apt
apt30m85.pdf

6.2. Size:23K apt
apt30m85svrg.pdf

APT30M85SVR300V 40A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementD3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche TestedD Lower Lea

Otros transistores... APT30M19JVFR , APT30M19JVR , APT30M40JVFR , APT30M40JVR , APT30M40LVFR , APT30M40LVR , APT30M70BVFR , APT30M70BVR , 10N60 , APT30M85BVR , APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , APT4016BN , APT4016BVR .

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