APT30M85BVFR Specs and Replacement

Type Designator: APT30M85BVFR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 700 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: TO247

APT30M85BVFR substitution

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APT30M85BVFR datasheet

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 apt30m85bvfr.pdf pdf_icon

APT30M85BVFR

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

 4.1. Size:64K  apt
 apt30m85bvr.pdf pdf_icon

APT30M85BVFR

APT30M85BVR 300V 40A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower ... See More ⇒

 4.2. Size:376K  inchange semiconductor
 apt30m85bvr.pdf pdf_icon

APT30M85BVFR

isc N-Channel MOSFET Transistor APT30M85BVR FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur... See More ⇒

 6.1. Size:69K  apt
 apt30m85.pdf pdf_icon

APT30M85BVFR

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes... See More ⇒

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Detailed specifications: APT30M19JVFR, APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR, APT30M70BVFR, APT30M70BVR, IRFB4110, APT30M85BVR, APT30M90AVR, APT4012BVR, APT4014BVR, APT4014HVR, APT4015AVR, APT4016BN, APT4016BVR

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