STP90NF03L Todos los transistores

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 stp90nf03l.pdf

STP90NF03L STB90NF03L-1 N-CHANNEL 30V - 0.0056 - 90A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE VDSS RDS(on) ID STP90NF03L 30 V

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 stp90nf03l stb90nf03l-1.pdf

STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056 -90A TO-220/I2PAK Low gate charge STripFET Power MOSFET General features VDSS Type RDS(on) ID (@Tjmax) STP90NF03L 30V

 ..3. Size:206K  inchange semiconductor
 stp90nf03l.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STP90NF03L FEATURES Typical R (on)=0.0056 DS Conduction losses reduced Switching losses reduced 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drai

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 sth90n15f4-2 stp90n15f4.pdf

STH90N15F4-2 STP90N15F4 N-channel 150 V, 12.5 m , 95 A TO-220, H2PAK STripFET DeepGATE Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STH90N15F4-2 150 V

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 std90n4f3 sti90n4f3 stp90n4f3 stu90n4f3.pdf

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 stp90ns04zc.pdf

STP90NS04ZC N-channel clamped 5m - 80A TO-220 Fully protected SAFeFET Power MOSFET Features Type VDSS RDS(on) ID STP90NS04ZC Clamped

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 stp90n6f6.pdf

STP90N6F6 N-channel 60 V, 0.0057 typ., 90 A STripFET F6 Power MOSFET in a TO-220 package Datasheet - production data Order code V R max. I P DS DS(on) D TOT STP90N6F6 60 V 0.0063 90 A 136 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description Figure

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 sth90n55f4-2 stp90n55f4.pdf

STH90N55F4-2 STP90N55F4 N-channel 55 V, 0.0064 , 90 A TO-220, H2PAK STripFET DeepGATE Power MOSFET Features Type VDSS RDS(on) max ID STH90N55F4-2 55 V

 8.6. Size:758K  cn vbsemi
 stp90n55f4.pdf

STP90N55F4 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.005 at VGS = 10 V 120 Material categorization 60 0.008 at VGS = 7.5 V 100 TO-220AB D G S N-Channel MOSFET G D S ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit