APT30M85BVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT30M85BVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 300 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm

Encapsulados: TO247

 Búsqueda de reemplazo de APT30M85BVR MOSFET

- Selecciónⓘ de transistores por parámetros

 

APT30M85BVR datasheet

 ..1. Size:64K  apt
 apt30m85bvr.pdf pdf_icon

APT30M85BVR

APT30M85BVR 300V 40A 0.085 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 ..2. Size:376K  inchange semiconductor
 apt30m85bvr.pdf pdf_icon

APT30M85BVR

isc N-Channel MOSFET Transistor APT30M85BVR FEATURES Drain Current I =40A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Static Drain-Source On-Resistance R =0.085 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 4.1. Size:69K  apt
 apt30m85bvfr.pdf pdf_icon

APT30M85BVR

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 6.1. Size:69K  apt
 apt30m85.pdf pdf_icon

APT30M85BVR

APT30M85BVFR 300V 40A 0.085 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

MOSTRAR MÁS

Otros transistores... APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR, APT30M40LVR, APT30M70BVFR, APT30M70BVR, APT30M85BVFR, IRF640N, APT30M90AVR, APT4012BVR, APT4014BVR, APT4014HVR, APT4015AVR, APT4016BN, APT4016BVR, APT4018HVR