All MOSFET. APT30M85BVR Datasheet

 

APT30M85BVR Datasheet and Replacement


   Type Designator: APT30M85BVR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 130 nC
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: TO247
 

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APT30M85BVR Datasheet (PDF)

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APT30M85BVR

APT30M85BVR300V 40A 0.085POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 ..2. Size:376K  inchange semiconductor
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APT30M85BVR

isc N-Channel MOSFET Transistor APT30M85BVRFEATURESDrain Current I =40A@ T =25D CDrain Source Voltage-: V =300V(Min)DSSStatic Drain-Source On-Resistance: R =0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 4.1. Size:69K  apt
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APT30M85BVR

APT30M85BVFR300V 40A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 6.1. Size:69K  apt
 apt30m85.pdf pdf_icon

APT30M85BVR

APT30M85BVFR300V 40A 0.085POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

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Datasheet: APT30M19JVR , APT30M40JVFR , APT30M40JVR , APT30M40LVFR , APT30M40LVR , APT30M70BVFR , APT30M70BVR , APT30M85BVFR , IRF630 , APT30M90AVR , APT4012BVR , APT4014BVR , APT4014HVR , APT4015AVR , APT4016BN , APT4016BVR , APT4018HVR .

Keywords - APT30M85BVR MOSFET datasheet

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