STU150N3LLH6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

S TU/D1530P LS amHop Microelectronics C orp.P reliminary Mar.28 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.45 @ VGS =-10V-30V -20ATO-252 and TO-251 Package.60 @ VGS = -4.5VDDGGSSDU SERIES SDD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABS

GreenProductSTU/D15L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.145 @ VGS=10VTO-252 and TO-251 Package.15A100V195 @ VGS=4.5V Halogen free.GSSTU SERIESSTD SERIES( )TO - 252AA D- PA

STU15L01www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS