All MOSFET. STU150N3LLH6 Datasheet

 

STU150N3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STU150N3LLH6
   Marking Code: 150N3LLH6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO251

 STU150N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU150N3LLH6 Datasheet (PDF)

 ..1. Size:945K  st
 std150n3llh6 stp150n3llh6 stu150n3llh6.pdf

STU150N3LLH6 STU150N3LLH6

STD150N3LLH6STP150N3LLH6, STU150N3LLH6N-channel 30 V, 0.0024 , 80 A, DPAK, IPAK, TO-220STripFET VI DeepGATE Power MOSFETFeaturesType VDSS RDS(on) max IDSTD150N3LLH6 30 V 0.0028 80 A 332STP150N3LLH6 30 V 0.0033 80 A11STu150N3LLH6 30 V 0.0033 80 AIPAKDPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on)32 Hi

 9.1. Size:148K  samhop
 stu15n20 std15n20.pdf

STU150N3LLH6 STU150N3LLH6

STU15N20GreenProductSTD15N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.200V 15A 190 @ VGS=10VTO-252 and TO-251 Package.GSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I - PAKAB

 9.2. Size:98K  samhop
 stu1530pl std1530pl.pdf

STU150N3LLH6 STU150N3LLH6

S TU/D1530P LS amHop Microelectronics C orp.P reliminary Mar.28 2004P-Channel E nhancement Mode MOS FE TPR ODUC T S UMMAR Y FEATUR ESR DS (ON) ( m ) MaxVDS S ID S uper high dense cell design for low R DS (ON).R ugged and reliable.45 @ VGS =-10V-30V -20ATO-252 and TO-251 Package.60 @ VGS = -4.5VDDGGSSDU SERIES SDD SERIESTO-252AA(D-PAK) TO-251(l-PAK)SABS

 9.3. Size:149K  samhop
 stu15l01 std15l01.pdf

STU150N3LLH6 STU150N3LLH6

GreenProductSTU/D15L01aS mHop Microelectronics C orp.Ver 1.2N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.145 @ VGS=10VTO-252 and TO-251 Package.15A100V195 @ VGS=4.5V Halogen free.GSSTU SERIESSTD SERIES( )TO - 252AA D- PA

 9.4. Size:845K  cn vbsemi
 stu15l01.pdf

STU150N3LLH6 STU150N3LLH6

STU15L01www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

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