STW20NM50 Todos los transistores

 ..1. Size:174K  st
 stw20nm50.pdf

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247 MDmesh MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V

 0.1. Size:251K  st
 stw20nm50fd.pdf

STW20NM50FD N-CHANNEL 500V - 0.22 - 20A TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STW20NM50FD 500V

 0.2. Size:211K  inchange semiconductor
 stw20nm50fd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM50FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 )

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 stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V

 7.2. Size:344K  st
 stf20nm60d stp20nm60fd stw20nm60fd.pdf

STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26 - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET (with fast diode) General features Type VDSS RDS(on) ID Pw STF20NM60D 600V

 7.3. Size:543K  st
 stw20nm65n.pdf

STW20NM65N-STI20NM65N-STF20NM65N STB20NM65N-STP20NM65N N-channel 650V - 0.16 - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) Max ID (@TJmax) 3 2 3 1 2 1 STB20NM65N 710V

 7.4. Size:256K  st
 stw20nm60.pdf

STW20NM60 N-CHANNEL 600V - 0.26 - 20A TO-247 MDmesh Power MOSFET TYPE VDSS RDS(on) ID STW20NM60 600V

 7.5. Size:437K  st
 stb20nm60-1 stp20nm60fp stb20nm60 stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V

 7.6. Size:212K  inchange semiconductor
 stw20nm60fd.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM60FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 )