STW20NM50 Datasheet and Replacement
Type Designator: STW20NM50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 285 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
Package: TO247
STW20NM50 substitution
STW20NM50 Datasheet (PDF)
stw20nm50.pdf

STW20NM50N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247MDmesh MOSFETTYPE VDSS RDS(on) ID(@Tjmax)STW20NM50 550V
stw20nm50fd.pdf

STW20NM50FDN-CHANNEL 500V - 0.22 - 20A TO-247FDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTW20NM50FD 500V
stw20nm50fd.pdf

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM50FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V
Datasheet: STW16N65M5 , STW16NK60Z , STW17N62K3 , STW18NM60N , STW18NM80 , STW19NM50N , STW20N95K5 , STW20NK50Z , 18N50 , STW20NM50FD , STW20NM60 , STW20NM60FD , STW21N65M5 , STW21N90K5 , STW21NM60ND , STW22NM60N , STW23NM50N .
History: STW34NM60N | UF630L-T2Q-T
Keywords - STW20NM50 MOSFET datasheet
STW20NM50 cross reference
STW20NM50 equivalent finder
STW20NM50 lookup
STW20NM50 substitution
STW20NM50 replacement
History: STW34NM60N | UF630L-T2Q-T



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