All MOSFET. STW20NM50 Datasheet

 

STW20NM50 Datasheet and Replacement


   Type Designator: STW20NM50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO247
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STW20NM50 Datasheet (PDF)

 ..1. Size:174K  st
stw20nm50.pdf pdf_icon

STW20NM50

STW20NM50N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247MDmesh MOSFETTYPE VDSS RDS(on) ID(@Tjmax)STW20NM50 550V

 0.1. Size:251K  st
stw20nm50fd.pdf pdf_icon

STW20NM50

STW20NM50FDN-CHANNEL 500V - 0.22 - 20A TO-247FDmesh Power MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTW20NM50FD 500V

 0.2. Size:211K  inchange semiconductor
stw20nm50fd.pdf pdf_icon

STW20NM50

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW20NM50FDFEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)

 7.1. Size:444K  st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf pdf_icon

STW20NM50

STB20NM60-1 - STP20NM60FPSTB20NM60 - STP20NM60 - STW20NM60N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAKMDmesh Power MOSFETFeaturesType VDSS RDS(on) ID31STP20NM60 600V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STW23NM60ND | STW12NK95Z | STW30NM50N | AP50T03GJ | AP60N2R5J | AP4530GH | AP50T10GH

Keywords - STW20NM50 MOSFET datasheet

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