STW20NM50 Specs and Replacement

Type Designator: STW20NM50

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 285 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm

Package: TO247

STW20NM50 substitution

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STW20NM50 datasheet

 ..1. Size:174K  st
stw20nm50.pdf pdf_icon

STW20NM50

STW20NM50 N-CHANNEL 550V @ Tjmax - 0.20 - 20ATO-247 MDmesh MOSFET TYPE VDSS RDS(on) ID (@Tjmax) STW20NM50 550V ... See More ⇒

 0.1. Size:251K  st
stw20nm50fd.pdf pdf_icon

STW20NM50

STW20NM50FD N-CHANNEL 500V - 0.22 - 20A TO-247 FDmesh Power MOSFET (with FAST DIODE) TYPE VDSS RDS(on) ID STW20NM50FD 500V ... See More ⇒

 0.2. Size:211K  inchange semiconductor
stw20nm50fd.pdf pdf_icon

STW20NM50

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW20NM50FD FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

 7.1. Size:444K  st
stb20nm60 stp20nm60fp stp20nm60 stw20nm60.pdf pdf_icon

STW20NM50

STB20NM60-1 - STP20NM60FP STB20NM60 - STP20NM60 - STW20NM60 N-channel 600V - 0.25 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID 3 1 STP20NM60 600V ... See More ⇒

Detailed specifications: STW16N65M5, STW16NK60Z, STW17N62K3, STW18NM60N, STW18NM80, STW19NM50N, STW20N95K5, STW20NK50Z, BS170, STW20NM50FD, STW20NM60, STW20NM60FD, STW21N65M5, STW21N90K5, STW21NM60ND, STW22NM60N, STW23NM50N

Keywords - STW20NM50 MOSFET specs

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