STW28NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STW28NM50N
Código: 28NM50N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 21 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 50 nC
Tiempo de subida (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 122 pF
Resistencia entre drenaje y fuente RDS(on): 0.158 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET STW28NM50N
STW28NM50N Datasheet (PDF)
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stw28nm50n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STW28NM50NFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
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