STW28NM50N
MOSFET. Datasheet pdf. Equivalent
Type Designator: STW28NM50N
Marking Code: 28NM50N
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 150
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 21
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 19
nS
Cossⓘ -
Output Capacitance: 122
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.158
Ohm
Package:
TO247
STW28NM50N
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW28NM50N
Datasheet (PDF)
..1. Size:790K st
stb28nm50n stf28nm50n stp28nm50n stw28nm50n.pdf 
STB28NM50N, STF28NM50NSTP28NM50N, STW28NM50NN-channel 500 V, 0.135 , 21 A D2PAK, TO-220, TO-220FP, TO-247MDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB28NM50NTO-220TO-220FPSTF28NM50N550 V
..2. Size:211K inchange semiconductor
stw28nm50n.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor STW28NM50NFEATURESWith TO-247 packagingWith low gate drive requirementsLow switching lossLow on-state resistanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
7.1. Size:1665K st
stb28nm60nd stf28nm60nd stp28nm60nd stw28nm60nd.pdf
STB28NM60ND, STF28NM60ND,STP28NM60ND, STW28NM60NDN-channel 600 V, 0.13 typ., 23 A FDmesh II Power MOSFETs in DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABVDS @2Order codes RDS(on) max ID3TJ max.13212STB28NM60NDD PAKTO-220FPSTF28NM60NDTAB650 V 0.150 23 ASTP28NM60NDSTW28NM60ND333221 211
8.1. Size:1114K st
stb28n60m2 sti28n60m2 stp28n60m2 stw28n60m2.pdf
STB28N60M2, STI28N60M2, STP28N60M2, STW28N60M2 N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in DPAK, IPAK, TO-220 and TO-247 Datasheet - production data Features Order code V @ T R max. I DS Jmax DS(on) DSTB28N60M2 STI28N60M2 650 V 0.150 22 A STP28N60M2 STW28N60M2 Extremely low gate charge Excellent output capacitance (C ) profile
8.2. Size:1235K st
stb28n65m2 stf28n65m2 stp28n65m2 stw28n65m2.pdf
STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output
8.3. Size:279K st
stw28nk60z.pdf
STW28NK60ZN-CHANNEL 600 V - 0.155 - 27A TO-247Zener-Protected SuperMESH MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) ID PWSTW28NK60Z 600 V
8.4. Size:1184K st
stb28n60m2 stp28n60m2 stw28n60m2.pdf
STB28N60M2, STP28N60M2, STW28N60M2N-channel 600 V, 0.135 typ., 22 A MDmesh M2 Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataTAB FeaturesTABVDS @ RDS(on) Order code ID3TJmax max1321STB28N60M2D2PAKTO-220STP28N60M2 650 V 0.150 22 ASTW28N60M2 Extremely low gate charge3 Excellent output capacitance (Coss) prof
8.5. Size:914K st
stb28n60dm2 stp28n60dm2 stw28n60dm2.pdf
STB28N60DM2, STP28N60DM2, STW28N60DM2 N-channel 600 V, 0.13 typ., 21 A MDmesh DM2 Power MOSFETs in DPAK, TO-220 and TO-247 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. Jmax.STB28N60DM2 STP28N60DM2 600 V 0.16 21 A 170 W STW28N60DM2 Fast-recovery body diode Extremely low gate charge and input capacita
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