STW34NB20 Todos los transistores

 

STW34NB20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STW34NB20
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 34 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 650 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: TO247

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STW34NB20 Datasheet (PDF)

 ..1. Size:228K  st
stw34nb20.pdf

STW34NB20
STW34NB20

STW34NB20N-CHANNEL 200V - 0.062 - 34A TO-247PowerMESH MOSFETTable 1. General Features Figure 1. PackageType VDSS RDS(on) IDSTW34NB20 200 V

 8.1. Size:510K  st
stf34nm60n stp34nm60n stw34nm60n.pdf

STW34NB20
STW34NB20

STF34NM60NSTP34NM60N, STW34NM60NN-channel 600 V, 0.092 , 29 A MDmesh II Power MOSFETTO-220, TO-247, TO-220FPPreliminary dataFeaturesRDS(on) Type VDSS ID PTOTmax.3322STF34NM60N 600 V 0.105 29 A 40 W11STP34NM60N 600 V 0.105 29 A 210 WTO-247TO-220STW34NM60N 600 V 0.105 29 A 210 W 100% avalanche tested3 Low input capacitance and ga

 8.2. Size:1424K  st
stb34n65m5 sti34n65m5 stp34n65m5 stw34n65m5.pdf

STW34NB20
STW34NB20

STB34N65M5, STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeatures TABTABOrder codes VDS @ TJmax RDS(on) max ID231321STB34N65M5D2PAKI2PAKSTI34N65M5710 V 0.11 28 ATABSTP34N65M5STW34N65M5 Worldwide best RDS(on) * area332

 8.3. Size:1035K  st
stw34nm60n.pdf

STW34NB20
STW34NB20

STW34NM60NN-channel 600 V, 0.092 typ., 31.5 A MDmesh II Power MOSFETs in a TO-247 packageDatasheet - production dataFeatures Order code VDSS RDS(on) ID PTOTSTW34NM60N 600 V 0.105 31.5 A 250 W 100% avalanche tested Low input capacitance and gate charge3 Low gate input resistance21ApplicationsTO-247 Switching applicationsDescriptionFigure 1.

 8.4. Size:1236K  st
stw34nm60nd stb34nm60nd stf34nm60nd stp34nm60nd.pdf

STW34NB20
STW34NB20

STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60NDN-channel 600 V, 0.097 typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247Datasheet production dataFeatures TABOrder codes VDS @TJ max. RDS(on) max. ID31STB34NM60ND321D2PAKSTF34NM60NDTO-220FP650 V 0.110 29 A STP34NM60NDTABSTW34NM60ND The worlds bes

 8.5. Size:1315K  st
stb34n65m5 stf34n65m5 stfi34n65m5 stp34n65m5 stw34n65m5.pdf

STW34NB20
STW34NB20

STB34N65M5, STF34N65M5, STFI34N65M5,STI34N65M5, STP34N65M5, STW34N65M5N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFET in a D2PAK, TO-220FP, I2PAKFP, I2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) Order codes ID2TJmax max313STB34N65M52D2PAK1TO-220FPSTF34N65M5I2PAKFPSTFI34N65M5 TABTAB710 V

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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