STW45NM60D Todos los transistores

 5.1. Size:325K  st
 stw45nm60.pdf

STW45NM60 N-channel 650V@Tjmax - 0.09 - 45A - TO-247 MDmesh Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STW45NM60 650V

 5.2. Size:200K  inchange semiconductor
 stw45nm60.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW45NM60 FEATURES High dv/dt and avalanche capabilities Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Tight process control and high manufacturing yields Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching application

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 stw45nm50.pdf

STW45NM50 N-channel 550 V @ TJmax, 0.08 , 45 A, TO-247 MDmesh Power MOSFET Features RDS(on) Type VDSS ID max STW45NM50FD 500 V

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 stw45nm50fd.pdf

STW45NM50FD N-channel 500 V, 0.07 , 45 A, TO-247 FDmesh Power MOSFET (with fast diode) Features RDS(on) Type VDSS ID max STW45NM50FD 500 V

 7.3. Size:212K  inchange semiconductor
 stw45nm50.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STW45NM50 FEATURES Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniat