STW45NM60D
MOSFET. Datasheet pdf. Equivalent
Type Designator: STW45NM60D
Marking Code: W45NM60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 417
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 45
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 96
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 1250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11
Ohm
Package:
TO247
STW45NM60D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STW45NM60D
Datasheet (PDF)
5.1. Size:325K st
stw45nm60.pdf
STW45NM60N-channel 650V@Tjmax - 0.09 - 45A - TO-247MDmesh Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STW45NM60 650V
5.2. Size:200K inchange semiconductor
stw45nm60.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW45NM60FEATURESHigh dv/dt and avalanche capabilitiesLow input capacitance and gate chargeLow gate input resistance100% avalanche testedTight process control and high manufacturing yieldsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching application
7.1. Size:585K st
stw45nm50.pdf
STW45NM50N-channel 550 V @ TJmax, 0.08 , 45 A, TO-247MDmesh Power MOSFETFeaturesRDS(on) Type VDSS IDmaxSTW45NM50FD 500 V
7.2. Size:581K st
stw45nm50fd.pdf
STW45NM50FDN-channel 500 V, 0.07 , 45 A, TO-247FDmesh Power MOSFET (with fast diode)FeaturesRDS(on) Type VDSS IDmaxSTW45NM50FD 500 V
7.3. Size:212K inchange semiconductor
stw45nm50.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STW45NM50FEATURESLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThe MDmesh family is very suitable for increasingpower density of high voltage converters allowing systemminiat
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