STW70N10F4 Todos los transistores

STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 , 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D2PAK Features Type VDSS RDS(on) max ID STB70N10F4 100 V

STW70N60DM6-4 Datasheet N-channel 600 V, 36 m typ., 62 A, MDmesh DM6 Power MOSFET in a TO247 4 package Features VDS RDS(on) max. ID Order code STW70N60DM6-4 600 V 42 m 62 A Fast-recovery body diode Lower RDS(on) per area vs previous generation 4 3 2 Low gate charge, input capacitance and resistance 1 100% avalanche tested TO247-4 Extremely high dv/dt

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3 capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

STW70N60M2 N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STW70N60M2 650 V 0.040 68 A Extremely low gate charge 3 2 1 Excellent output capacitance (Coss) profile 100% avalanche tested TO-247 Zener-protected Applications Figure 1. Internal schematic

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1 Applications TO-247 Switching applicat