All MOSFET. STW70N10F4 Datasheet

 

STW70N10F4 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STW70N10F4
   Marking Code: 70N10F4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 85 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
   Package: TO247

 STW70N10F4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STW70N10F4 Datasheet (PDF)

 ..1. Size:971K  st
 stb70n10f4 std70n10f4 stp70n10f4 stw70n10f4.pdf

STW70N10F4 STW70N10F4

STB70N10F4, STD70N10F4STP70N10F4, STW70N10F4N-channel 100 V, 0.015 , 60 A, STripFET DeepGATEPower MOSFET in TO-220, DPAK, TO-247, D2PAKFeaturesType VDSS RDS(on) max IDSTB70N10F4 100 V

 8.1. Size:452K  st
 stw70n60dm6-4.pdf

STW70N10F4 STW70N10F4

STW70N60DM6-4DatasheetN-channel 600 V, 36 m typ., 62 A, MDmesh DM6 Power MOSFET in a TO2474 packageFeaturesVDS RDS(on) max. IDOrder codeSTW70N60DM6-4 600 V 42 m 62 A Fast-recovery body diode Lower RDS(on) per area vs previous generation432 Low gate charge, input capacitance and resistance1 100% avalanche testedTO247-4 Extremely high dv/dt

 8.2. Size:599K  st
 stw70n60dm2.pdf

STW70N10F4 STW70N10F4

STW70N60DM2 N-channel 600 V, 0.037 typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOTSTW70N60DM2 600 V 0.042 66 A 446 W Fast-recovery body diode Extremely low gate charge and input 3capacitance 2 Low on-resistance 1 100% avalanche tested Extremely high dv/d

 8.3. Size:1022K  st
 stw70n60m2.pdf

STW70N10F4 STW70N10F4

STW70N60M2N-channel 600 V, 0.03 typ., 68 A MDmesh M2 Power MOSFET in a TO-247 packageDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTW70N60M2 650 V 0.040 68 A Extremely low gate charge321 Excellent output capacitance (Coss) profile 100% avalanche testedTO-247 Zener-protected ApplicationsFigure 1. Internal schematic

 8.4. Size:712K  st
 stw70n65m2.pdf

STW70N10F4 STW70N10F4

STW70N65M2 N-channel 650 V, 0.039 typ., 63 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) DSTW70N65M2 650 V 0.046 63 A Extremely low gate charge Excellent output capacitance (COSS) profile 3 100% avalanche tested 2 Zener-protected 1Applications TO-247 Switching applicat

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CHM3U22VESGP | ELM34604AA | IRFH5406PBF | AM5480N

 

 
Back to Top