STW7N95K3 Todos los transistores

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STW7N95K3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STW7N95K3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente (Vds): 950 V

Corriente continua de drenaje (Id): 7.2 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 1.35 Ohm

Empaquetado / Estuche: TO247

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STW7N95K3 Datasheet (PDF)

1.1. stf7n95k3_stp7n95k3_stw7n95k3.pdf Size:939K _st

STW7N95K3
STW7N95K3

STF7N95K3 STP7N95K3, STW7N95K3 N-channel 950 V, 1.1 ?, 7.2 A, TO-220, TO-220FP, TO-247 Zener-protected SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 STF7N95K3 950 V < 1.35 ? 7.2 A 35 W 2 1 STP7N95K3 950 V < 1.35 ? 7.2 A 150 W TO-247 STW7N95K3 950 V < 1.35 ? 7.2 A 150 W 3 100% avalanche tested 2 1 Extremely large avalanche performance TO-220 3 2 Gate ch

5.1. stp6nk90z_stp6nk90zfp_stb6nk90z_stw7nk90z.pdf Size:481K _st

STW7N95K3
STW7N95K3

STP6NK90Z - STP6NK90ZFP STB6NK90Z - STW7NK90Z N-channel 900V - 1.56? - 5.8A - TO-220/TO-220FP/D2PAK/TO-247 Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS(on) ID STP6NK90Z 900 V < 2 ? 5.8 A 3 STP6NK90ZFP 900 V < 2 ? 5.8 A 2 1 STB6NK90Z 900 V < 2 ? 5.8 A TO-220FP TO-220 STW7NK90Z 900 V < 2 ? 5.8 A Extremely high dv/dt capability 100% avalanche tested 3 Gate ch

5.2. stw7nc80z.pdf Size:264K _st2

STW7N95K3
STW7N95K3

STW7NC80Z N-CHANNEL 800V - 1.5? - 6A TO-247 Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STW7NC80Z 800 V < 1.8? 6A TYPICAL RDS(on) = 1.5? EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY Power MOSFETs for very high voltage

5.3. stw7na80.pdf Size:123K _st2

STW7N95K3
STW7N95K3

STW7NA80 STH7NA80FI ? N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V < 1.9 ? 6.5 A STH7NA80FI 800 V < 1.9 ? 4 A TYPICAL R = 1.68 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 LOW INTRINSIC CAPACITANCES 1 2 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-2

5.4. stw7nb80-.pdf Size:47K _st2

STW7N95K3
STW7N95K3

STW7NB80 N - CHANNEL 800V - 1.6? - 6.5A - TO-247 PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STW7NB80 800 V < 1.9 ? 6.5 A TYPICAL R = 1.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an

5.5. stw7nb80.pdf Size:253K _st2

STW7N95K3
STW7N95K3

STW7NB80 N-CHANNEL 800V - 1.6? - 6.5A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID STW7NB80 800 V < 1.9 ? 6.5 A TYPICAL R = 1.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES 3 GATE CHARGE MINIMIZED 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY? process, STMicroelectronics

5.6. stw7n.pdf Size:122K _st2

STW7N95K3
STW7N95K3

STW7NA80 STH7NA80FI ? N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW7NA80 800 V < 1.9 ? 6.5 A STH7NA80FI 800 V < 1.9 ? 4 A TYPICAL R = 1.68 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 LOW INTRINSIC CAPACITANCES 1 2 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-2

5.7. stw7na90.pdf Size:332K _st2

STW7N95K3
STW7N95K3

STW7NA90 STH7NA90FI N - CHANNEL 900V - 1.05? - 7A - TO-247/ISOWATT218 FAST POWER MOSFET TYPE VDSS RDS(on) ID STW7NA90 900 V < 1.3 ? 7 A STH7NA90FI 900 V < 1.3 ? 4.7 A TYPICAL R = 1.05 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCE 3 3 2 GATE CHARGE MINIMIZED 2 1 1 REDUCED VOLTAGE SPREAD

5.8. stw7nc90z.pdf Size:243K _st2

STW7N95K3
STW7N95K3

STW7NC90Z N-CHANNEL 900V - 1.55? - 6A TO-247 Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STW7NC90Z 900 V < 1.9 ? 6 A TYPICAL RDS(on) = 1.55? EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY Power MOSFETs for very high vol

5.9. stw7na100.pdf Size:76K _st2

STW7N95K3
STW7N95K3

STW7NA100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID STW7NA100 1000 V < 1.7 ? 7 A STH7NA100FI 1000 V < 1.7 ? 4.3 A TYPICAL R = 1.45 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 GATE CHARGE MINIMISED 2 2 1 REDUCED THRESHOLD VOLTAGE SPREAD 1 APPLICATIONS TO-247 ISOWATT21

Otros transistores... STW60N65M5 , STW62NM60N , STW6N120K3 , STW6N95K5 , STW70N10F4 , STW75NF20 , STW75NF30 , STW77N65M5 , IRF530 , STW7NK90Z , STW8NK80Z , STW90NF20 , STW9N150 , STW9NK70Z , STW9NK90Z , STY112N65M5 , STY130NF20D .

 


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