APT40M82WVR Todos los transistores

 ..1. Size:60K  apt
 apt40m82wvr.pdf

APT40M82WVR 400V 44A 0.082 POWER MOS V TO-267 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.1. Size:59K  apt
 apt40m42jn.pdf

D G APT40M42JN 400V 86A 0.042 S "UL Recognized" File No. E145592 (S) ISOTOP POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT Symbol Parameter 40M42JN UNIT VDSS Drain-Source Voltage 400 Volts ID Continuous Drain Current @ TC = 25 C 86 Amps IDM, lLM Pulse

 8.2. Size:62K  apt
 apt40m70lvr.pdf

APT40M70LVR 400V 57A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Lowe

 8.3. Size:69K  apt
 apt40m70jvr.pdf

APT40M70JVR 400V 53A 0.070 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 8.4. Size:72K  apt
 apt40m35jvr.pdf

APT40M35JVR 400V 93A 0.035 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 8.5. Size:62K  apt
 apt40m75jn.pdf

D G APT40M75JN 400V 56.0A 0.075 S APT40M90JN 400V 51.0A 0.090 ISOTOP "UL Recognized" File No. E145592 (S) POWER MOS IV SINGLE DIE ISOTOP PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings TC = 25 C unless otherwise specified. APT APT Symbol Parameter 40M75JN 40M90JN UNIT VDSS Drain-Source Voltage 400 400 Volts ID Continuous Dr

 8.6. Size:70K  apt
 apt40m70jvfr.pdf

APT40M70JVFR 400V 53A 0.070 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster

 8.7. Size:36K  apt
 apt40m35pvr.pdf

APT40M35PVR 400V 89A 0.035 POWER MOS V P-Pack Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 8.8. Size:148K  apt
 apt40m70b2vfrg apt40m70lvfrg.pdf

400V 57A 0.070 APT40M70B2VFR APT40M70LVFR APT40M70B2VFRG* APT40M40LVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance

 8.9. Size:116K  microsemi
 apt40m35jvfr.pdf

APT40M35JVFR 400V 93A 0.035 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" also achieves faster switching speeds through optimized gate layout. ISOTOP Faster