BSB017N03LX3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSB017N03LX3G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.8 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 32 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.4 nS
Cossⓘ - Capacitancia de salida: 2300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm
Paquete / Cubierta: WDSON2
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BSB017N03LX3G Datasheet (PDF)
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Otros transistores... STY60NM50 , STY60NM60 , STY80NM60N , STZ150NF55T , BSB012N03LX3G , BSB012NE2LX , BSB014N04LX3G , BSB015N04NX3G , IRF1010E , BSB019N03LXG , BSB024N03LXG , BSB028N06NN3G , BSB053N03LPG , BSC010NE2LS , BSC011N03LS , BSC014N03LSG , BSC014N03MSG .
History: VBA4317 | 2SK4076-ZK | PHP18NQ10T
History: VBA4317 | 2SK4076-ZK | PHP18NQ10T



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