BSC010NE2LS Todos los transistores

 ..1. Size:755K  infineon
 bsc010ne2ls.pdf

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 bsc010ne2lsi.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI Data Sheet Rev. 2.3 Final Power Management & Multimarket OptiMOSTM Power-MOSFET, 25 V BSC010NE2LSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance Buck converter Monolithic integrated Schottky like diode Very low on-resi

 7.1. Size:573K  infineon
 bsc010n04ls.pdf

BSC010N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for sychronous rectification RDS(on),max 1.0 mW Very low on-resistance R DS(on) ID 100 A 100% avalanche tested Qoss 84 nC Superior thermal resistance Qg(0V..10V) 95 nC N-channel, logic level PG-TDSON-8 FL Qualified according to JEDEC1) for target applications (enlarg

 7.2. Size:1279K  infineon
 bsc010n04lst.pdf

BSC010N04LST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 40 V 8 7 6 Features 5 Optimized for sychronous rectification 175 C rated 1 5 2 6 Very low on-resistance R DS(on) 7 3 4 8 100% avalanche tested Superior thermal resistance 4 N-channel, logic level 3 Qualified according to JEDEC1) for target applications 2

 7.3. Size:1476K  infineon
 bsc010n04ls6.pdf

BSC010N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2

 7.4. Size:598K  infineon
 bsc010n04lsi.pdf

BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for synchronous rectification RDS(on),max 1.05 mW Integrated monolithic Schottky-like diode A ID 100 Very low on-resistance R DS(on) QOSS 83 nC 100% avalanche tested 87 nC QG(0V..10V) N-channel, channel Qualified according to JEDEC1) for target applications PG-TDSO