BSC016N04LSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSC016N04LSG
   Código: 016N04LS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 113 nC
   trⓘ - Tiempo de subida: 7.6 nS
   Cossⓘ - Capacitancia de salida: 1800 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: TDSON8

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BSC016N04LSG Datasheet (PDF)

..1. Size:311K infineon
bsc016n04lsg.pdf

BSC016N04LS GOptiMOS3 Power-TransistorProduct SummaryV 40 VFeatures DSR 1.6m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

6.1. Size:385K infineon
bsc016n03ls.pdf

BSC016N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.6mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

6.2. Size:679K infineon
bsc016n03ls .pdf

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6.3. Size:1264K infineon
bsc016n06nst.pdf

BSC016N06NSTMOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM Power-MOSFET, 60 V876Features5 Optimized for synchronous rectification 175 C rated1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications3 Pb-free lead plating; RoHS compliant 21

6.4. Size:542K infineon
bsc016n03msg.pdf

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6.5. Size:566K infineon
bsc016n06ns.pdf

BSC016N06NSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 1.6 mW 100% avalanche testedID 100 A Superior thermal resistanceQOSS 81 nC N-channelQG(0V..10V) 71 nC Qualified according to JEDEC1) for target applicationsPG-TDSON-8 FL Pb-free lead plating; RoHS compliantenlarged source

6.6. Size:387K infineon
bsc016n03lsg.pdf

6.7. Size:194K infineon
bsc016n03ms.pdf

BSC016N03MS GProduct SummaryOptiMOS3 M-Series Power-MOSFETV 30 VDSFeaturesR V =10 V 1.6mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 2GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM3U33SESGP | IPW60R280C6

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