BSC016N04LSG Specs and Replacement
Type Designator: BSC016N04LSG
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.6 nS
Cossⓘ - Output Capacitance: 1800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TDSON8
BSC016N04LSG substitution
- MOSFET ⓘ Cross-Reference Search
BSC016N04LSG datasheet
bsc016n03ls .pdf
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bsc016n06nst.pdf
BSC016N06NST MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM Power-MOSFET, 60 V 8 7 6 Features 5 Optimized for synchronous rectification 175 C rated 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 3 Pb-free lead plating; RoHS compliant 2 1 ... See More ⇒
Detailed specifications: BSB028N06NN3G, BSB053N03LPG, BSC010NE2LS, BSC011N03LS, BSC014N03LSG, BSC014N03MSG, BSC016N03LSG, BSC016N03MSG, AON7410, BSC017N04NSG, BSC018N04LSG, BSC018NE2LS, BSC019N02KSG, BSC019N04NSG, BSC020N025SG, BSC020N03LSG, BSC020N03MSG
Keywords - BSC016N04LSG MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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