BSC027N04LSG Todos los transistores

 

BSC027N04LSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC027N04LSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 40 V

Corriente continua de drenaje (Id): 100 A

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 64 nC

Resistencia drenaje-fuente RDS(on): 0.0027 Ohm

Empaquetado / Estuche: SuperSO8

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BSC027N04LSG Datasheet (PDF)

1.1. bsc027n04lsg rev1.04.pdf Size:641K _infineon

BSC027N04LSG
BSC027N04LSG

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5.1. bsc025n03ls.pdf Size:382K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC025N03LS G OptiMOS™3 Power-MOSFET Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 2.5 mΩ DS(on),max • Optimized technology for DC/DC converters I 100 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Super

5.2. bsc028n06ns.pdf Size:437K _update-mosfet

BSC027N04LSG
BSC027N04LSG

Type BSC028N06NS OptiMOSTM Power-Transistor Product Summary Features VDS 60 V • Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW • 100% avalanche tested ID 100 A • Superior thermal resistance Qoss 43 nC • N-channel QG(0..10V) 37 nC • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Haloge

 5.3. bsc025n03ms.pdf Size:194K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC025N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 mΩ DS(on),max GS • Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS • Low FOMSW for High Frequency SMPS I 100 A D • 100% avalanche tested • N-channel PG-TDSON-8 • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R product (

5.4. bsc020n03ms.pdf Size:452K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC020N03MS G OptiMOS™3 M-Series Power-MOSFET Product Summary Features V 30 V DS • Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 mΩ DS(on),max GS V =4.5 V 2.5 • Low FOMSW for High Frequency SMPS GS I 100 A D • 100% Avalanche tested PG-TDSON-8 • N-channel • Very low on-resistance R @ V =4.5 V DS(on) GS • Excellent gate charge x R product

 5.5. bsc020n03ls.pdf Size:385K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC020N03LS G OptiMOS™3 Power-MOSFET Product Summary Features V 30 V DS • Fast switching MOSFET for SMPS R 2 mΩ DS(on),max • Optimized technology for DC/DC converters I 100 A D • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level • Excellent gate charge x R product (FOM) DS(on) • Very low on-resistance R DS(on) • Superio

5.6. bsc026n02ks.pdf Size:659K _update-mosfet

BSC027N04LSG
BSC027N04LSG

 % ! % D #:A0< &<,9=4=>:< #<:/?.> %?88,2= B6C:CD2?46 Q F2=2?496 B2D65

5.7. bsc026n08ns5.pdf Size:1182K _update-mosfet

BSC027N04LSG
BSC027N04LSG

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 • Optimized for Synchronous Rectification in server and desktop • 100% avalanche tested • Superior t

5.8. bsc026ne2ls5.pdf Size:1492K _update-mosfet

BSC027N04LSG
BSC027N04LSG

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 • Optimized for high performance buck converters • Very low on-resistance R @ V =4.5 V DS(on) GS • 100% ava

5.9. bsc026n04ls.pdf Size:586K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW • Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A • 100% avalanche tested QOSS 28 nC • Superior thermal resistance QG(0V..10V) 32 nC • N-channel • Qualified according to JEDEC1) for target applications PG-TDSON-

5.10. bsc022n04ls.pdf Size:586K _update-mosfet

BSC027N04LSG
BSC027N04LSG

BSC022N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V • Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.2 mW • Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A • 100% avalanche tested QOSS 33 nC • Superior thermal resistance QG(0V..10V) 37 nC • N-channel • Qualified according to JEDEC1) for target applications PG-TDSON-

5.11. bsc024ne2ls rev2.1.pdf Size:1625K _infineon

BSC027N04LSG
BSC027N04LSG

n-Channel Power MOSFET OptiMOS BSC024NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC024NE2LS 1 Description OptiMOS25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMOS 25V t

5.12. bsc022n03s rev1.65 g.pdf Size:631K _infineon

BSC027N04LSG
BSC027N04LSG

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5.13. bsc028n06ls3 rev2.2.pdf Size:562K _infineon

BSC027N04LSG
BSC027N04LSG

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5.14. bsc020n025s rev1.4 g.pdf Size:633K _infineon

BSC027N04LSG
BSC027N04LSG

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5.15. bsc020n03msg rev1.16.pdf Size:677K _infineon

BSC027N04LSG
BSC027N04LSG

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5.16. bsc025n03msg rev1.15.pdf Size:542K _infineon

BSC027N04LSG
BSC027N04LSG

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5.17. bsc026n02ksgrev1.06.pdf Size:662K _infineon

BSC027N04LSG
BSC027N04LSG

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5.18. bsc025n03ls rev1.6.pdf Size:685K _infineon

BSC027N04LSG
BSC027N04LSG

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A

5.19. bsc020n03ls rev1.27.pdf Size:679K _infineon

BSC027N04LSG
BSC027N04LSG

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG:D49:?8 ') - . 7@B -'*- m D n) m x Q ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G? D ON? Q ( 492??6= &@8:4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C:CD2?46 D n) Q -EA6B:@B D96B>2= B6C:CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D:?8 , @"- 4@>A

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