APT5010JVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT5010JVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 450 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 16 nS

Cossⓘ - Capacitancia de salida: 1000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm

Encapsulados: SOT227

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APT5010JVFR datasheet

 ..1. Size:73K  apt
 apt5010jvfr.pdf pdf_icon

APT5010JVFR

APT5010JVFR 500V 44A 0.100 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Fast Recovery Body Diode

 5.1. Size:112K  apt
 apt5010jvru3.pdf pdf_icon

APT5010JVFR

APT5010JVRU3 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

 5.2. Size:111K  apt
 apt5010jvru2.pdf pdf_icon

APT5010JVFR

APT5010JVRU2 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP D Faster Switching 100% Avalan

 5.3. Size:71K  apt
 apt5010jvr.pdf pdf_icon

APT5010JVFR

APT5010JVR 500V 44A 0.100 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche T

MOSTRAR MÁS

Otros transistores... APT40M42JN, APT40M70JVR, APT40M70LVR, APT40M75JN, APT40M82WVR, APT5010B2VFR, APT5010B2VR, APT5010JN, AO3401, APT5010JVR, APT5010LVFR, APT5010LVR, APT5012WVR, APT5014B2VR, APT5014LVR, APT5015BVR, APT5017BVFR