APT5010JVFR Todos los transistores

 

APT5010JVFR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT5010JVFR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 450 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 44 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SOT227
 

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APT5010JVFR Datasheet (PDF)

 ..1. Size:73K  apt
 apt5010jvfr.pdf pdf_icon

APT5010JVFR

APT5010JVFR500V 44A 0.100POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 5.1. Size:112K  apt
 apt5010jvru3.pdf pdf_icon

APT5010JVFR

APT5010JVRU3500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 5.2. Size:111K  apt
 apt5010jvru2.pdf pdf_icon

APT5010JVFR

APT5010JVRU2500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOPD Faster Switching 100% Avalan

 5.3. Size:71K  apt
 apt5010jvr.pdf pdf_icon

APT5010JVFR

APT5010JVR500V 44A 0.100POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche T

MOSTRAR MÁS

Otros transistores... APT40M42JN , APT40M70JVR , APT40M70LVR , APT40M75JN , APT40M82WVR , APT5010B2VFR , APT5010B2VR , APT5010JN , AO3400 , APT5010JVR , APT5010LVFR , APT5010LVR , APT5012WVR , APT5014B2VR , APT5014LVR , APT5015BVR , APT5017BVFR .

History: SML60L38 | SVSP24NF60FJDD2 | FDA69N25 | ZXMHN6A07T8 | 2N6763 | PHD2N60E | ZVN2110ASTZ

 

 
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