BSC030N04NSG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC030N04NSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 1100 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Paquete / Cubierta: TDSON8
Búsqueda de reemplazo de BSC030N04NSG MOSFET
BSC030N04NSG PDF Specs
bsc030n04nsg.pdf
BSC030N04NS G OptiMOS 3 Power-Transistor Product Summary V 40 V Features DS R 3.0 m Fast switching MOSFET for SMPS DS(on),max I 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S... See More ⇒
bsc030n03ls .pdf
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D m Q 2CD CG D49 ?8 ') - . 7@B -'*- D n) m x 1 D Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1) G D ON Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @... See More ⇒
bsc030n08ns5.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 Data Sheet Rev. 2.2 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC030N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re... See More ⇒
bsc030n03lsg.pdf
BSC030N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS R 3 m Fast switching MOSFET for SMPS DS(on),max I 100 A D Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒
Otros transistores... BSC024NE2LS , BSC025N03LSG , BSC025N03MSG , BSC026N02KSG , BSC027N04LSG , BSC028N06LS3G , BSC030N03LSG , BSC030N03MSG , 2SK3568 , BSC030P03NS3G , BSC031N06NS3G , BSC032N03SG , BSC034N03LSG , BSC035N04LSG , BSC042N03LSG , BSC042N03MSG , BSC042N03SG .
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