BSC030N04NSG - Даташиты. Аналоги. Основные параметры

BSC030N04NS GOptiMOS3 Power-Transistor Product SummaryV 40 VFeatures DSR 3.0m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5Data SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

BSC030N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 3mDS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8GSI 100 A 100% avalanche tested DPG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product

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BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi