BSC042NE7NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BSC042NE7NS3G
   Código: 042NE7NS
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 19 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.8 V
   Qgⓘ - Carga de la puerta: 52 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 810 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
   Paquete / Cubierta: TDSON8

Búsqueda de reemplazo de MOSFET BSC042NE7NS3G

BSC042NE7NS3G Datasheet (PDF)

..1. Size:590K infineon
bsc042ne7ns3g.pdf

$ $ "9@/; %;+877+;BFeatures 7 D Q ( @D9=9J54 D538>??EC B53D96931D9?> 4 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35>5?B=1

7.1. Size:637K infineon
bsc042n03s .pdf

% ! % D #:A0

7.2. Size:664K infineon
bsc042n03ls .pdf

& " & $=;0@/? &@99-=D E $;B1= !#& 'D Features 4 m D n) m xQ 2CD CG:D49:?8 ') - . 7@B -'*-DQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

7.3. Size:483K infineon
bsc042n03ls bsc042n03lsg.pdf

BSC042N03LS GOptiMOS3 Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max 4.2 mW Fast switching MOSFET for SMPSID 93 A Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

7.4. Size:484K infineon
bsc042n03ms.pdf

BSC042N03MS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 5.4 100% Avalanche testedID 93 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS(on)

7.5. Size:383K infineon
bsc042n03s.pdf

BSC042N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 4.2mDS(on),max Optimized technology for notebook DC/DC convertersI 95 AD Qualified according to JEDEC1 for target applicationsPG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

7.6. Size:267K infineon
bsc042n03msg.pdf

BSC042N03MS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 4.2mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.4GS 100% Avalanche testedI 93 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)D

Otros transistores... BSC030P03NS3G , BSC031N06NS3G , BSC032N03SG , BSC034N03LSG , BSC035N04LSG , BSC042N03LSG , BSC042N03MSG , BSC042N03SG , IRF530 , BSC046N02KSG , BSC047N08NS3G , BSC050N03LSG , BSC050N03MSG , BSC050N04LSG , BSC050NE2LS , BSC052N03LS , BSC052N03SG .

Liste

Recientemente añadidas las descripciónes de los transistores: