BSC042NE7NS3G Todos los transistores

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BSC042N03LS G OptiMOS 3 Power-MOSFET Product Summary VDS 30 V Features RDS(on),max 4.2 mW Fast switching MOSFET for SMPS ID 93 A Optimized technology for DC/DC converters PG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

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 bsc042n03ms.pdf

BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 5.4 100% Avalanche tested ID 93 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS(on)

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BSC042N03S G OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 4.2 m DS(on),max Optimized technology for notebook DC/DC converters I 95 A D Qualified according to JEDEC1 for target applications PG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(

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 bsc042n03msg.pdf

BSC042N03MS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 4.2 m DS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 5.4 GS 100% Avalanche tested I 93 A D N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) D