BSC042NE7NS3G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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BSC042N03LS GOptiMOS3 Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max 4.2 mW Fast switching MOSFET for SMPSID 93 A Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

BSC042N03MS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 5.4 100% Avalanche testedID 93 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS(on)

BSC042N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 4.2mDS(on),max Optimized technology for notebook DC/DC convertersI 95 AD Qualified according to JEDEC1 for target applicationsPG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

BSC042N03MS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 4.2mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.4GS 100% Avalanche testedI 93 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)D