All MOSFET. BSC042NE7NS3G Datasheet

 

BSC042NE7NS3G MOSFET. Datasheet pdf. Equivalent


   Type Designator: BSC042NE7NS3G
   Marking Code: 042NE7NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 19 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 52 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 810 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TDSON8

 BSC042NE7NS3G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSC042NE7NS3G Datasheet (PDF)

 ..1. Size:590K  infineon
bsc042ne7ns3g.pdf

BSC042NE7NS3G BSC042NE7NS3G

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 7.1. Size:637K  infineon
bsc042n03s .pdf

BSC042NE7NS3G BSC042NE7NS3G

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 7.2. Size:664K  infineon
bsc042n03ls .pdf

BSC042NE7NS3G BSC042NE7NS3G

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 7.3. Size:483K  infineon
bsc042n03ls bsc042n03lsg.pdf

BSC042NE7NS3G BSC042NE7NS3G

BSC042N03LS GOptiMOS3 Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max 4.2 mW Fast switching MOSFET for SMPSID 93 A Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

 7.4. Size:484K  infineon
bsc042n03ms.pdf

BSC042NE7NS3G BSC042NE7NS3G

BSC042N03MS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 4.2 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 5.4 100% Avalanche testedID 93 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)DS(on)

 7.5. Size:383K  infineon
bsc042n03s.pdf

BSC042NE7NS3G BSC042NE7NS3G

BSC042N03S GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 4.2mDS(on),max Optimized technology for notebook DC/DC convertersI 95 AD Qualified according to JEDEC1 for target applicationsPG-TDSON-8 Logic level / N-channel Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(

 7.6. Size:267K  infineon
bsc042n03msg.pdf

BSC042NE7NS3G BSC042NE7NS3G

BSC042N03MS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 4.2mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 5.4GS 100% Avalanche testedI 93 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N6798SM

 

 
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