BSC054N04NSG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC054N04NSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 17 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 2.6 nS
Cossⓘ - Capacitancia de salida: 620 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm
Encapsulados: TDSON8
Búsqueda de reemplazo de BSC054N04NSG MOSFET
- Selecciónⓘ de transistores por parámetros
BSC054N04NSG datasheet
..1. Size:518K infineon
bsc054n04nsg.pdf 
BSC054N04NS G OptiMOS 3 Power-Transistor Product Summary VDS 40 V Features Fast switching MOSFET for SMPS RDS(on),max 5.4 mW Optimized technology for DC/DC converters ID 81 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Su
9.1. Size:486K infineon
bsc057n03ms.pdf 
BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM
9.2. Size:485K infineon
bsc050n03ms.pdf 
BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS
9.3. Size:1364K infineon
bsc050n10ns5.pdf 
BSC050N10NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 175 C rated Product Validation Qualified for
9.4. Size:548K infineon
bsc057n03msg5.pdf 
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9.5. Size:1611K infineon
bsc052n03ls.pdf 
n-Channel Power MOSFET OptiMOS BSC052N03LS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC052N03LS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS
9.6. Size:521K infineon
bsc057n03lsg.pdf 
BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super
9.7. Size:1593K infineon
bsc059n04ls6.pdf 
BSC059N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2
9.8. Size:519K infineon
bsc059n04lsg.pdf 
BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.9 mW Optimized technology for DC/DC converters ID 73 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S
9.9. Size:548K infineon
bsc050n03msg5.pdf 
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9.10. Size:1634K infineon
bsc050ne2ls .pdf 
n-Channel Power MOSFET OptiMOS BSC050NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC050NE2LS 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMO
9.11. Size:482K infineon
bsc050n03ls.pdf 
BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
9.12. Size:482K infineon
bsc057n03ls.pdf 
BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super
9.14. Size:587K infineon
bsc057n08ns3g.pdf 
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9.15. Size:693K infineon
bsc057n03ls .pdf 
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9.16. Size:520K infineon
bsc050n04lsg.pdf 
BSC050N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.0 mW Optimized technology for DC/DC converters ID 85 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S
9.17. Size:1561K infineon
bsc0503nsi.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
9.18. Size:830K infineon
bsc050ne2ls.pdf 
BSC050NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 58 A 100% avalanche tested QGD 1.3 nC Superior thermal resistance QG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8
9.19. Size:525K infineon
bsc057n03msg.pdf 
BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM
9.20. Size:691K infineon
bsc050n03ls .pdf 
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @"- 4@>
9.21. Size:522K infineon
bsc050n03lsg.pdf 
BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
9.22. Size:274K infineon
bsc059n03s.pdf 
BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for notebook DC/DC converters I 50 A D Qualified according to JEDEC1 for target applications N-channel Logic level P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)
9.23. Size:1570K infineon
bsc0504nsi.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
9.24. Size:1580K infineon
bsc0502nsi.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
9.25. Size:1175K infineon
bsc052n08ns5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re
9.27. Size:1555K infineon
bsc0501nsi.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis
Otros transistores... BSC046N02KSG
, BSC047N08NS3G
, BSC050N03LSG
, BSC050N03MSG
, BSC050N04LSG
, BSC050NE2LS
, BSC052N03LS
, BSC052N03SG
, STP65NF06
, BSC057N03LSG
, BSC057N03MSG
, BSC057N08NS3G
, BSC059N03SG
, BSC059N04LSG
, BSC060N10NS3G
, BSC060P03NS3EG
, BSC067N06LS3G
.
History: BSC0504NSI
| BSC0501NSI
| BSC010N04LS6