BSC054N04NSG Todos los transistores

 

BSC054N04NSG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC054N04NSG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2.6 nS

Cossⓘ - Capacitancia de salida: 620 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: TDSON8

 Búsqueda de reemplazo de BSC054N04NSG MOSFET

- Selecciónⓘ de transistores por parámetros

 

BSC054N04NSG datasheet

 ..1. Size:518K  infineon
bsc054n04nsg.pdf pdf_icon

BSC054N04NSG

BSC054N04NS G OptiMOS 3 Power-Transistor Product Summary VDS 40 V Features Fast switching MOSFET for SMPS RDS(on),max 5.4 mW Optimized technology for DC/DC converters ID 81 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Su

 9.1. Size:486K  infineon
bsc057n03ms.pdf pdf_icon

BSC054N04NSG

BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM

 9.2. Size:485K  infineon
bsc050n03ms.pdf pdf_icon

BSC054N04NSG

BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS

 9.3. Size:1364K  infineon
bsc050n10ns5.pdf pdf_icon

BSC054N04NSG

BSC050N10NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 175 C rated Product Validation Qualified for

Otros transistores... BSC046N02KSG , BSC047N08NS3G , BSC050N03LSG , BSC050N03MSG , BSC050N04LSG , BSC050NE2LS , BSC052N03LS , BSC052N03SG , STP65NF06 , BSC057N03LSG , BSC057N03MSG , BSC057N08NS3G , BSC059N03SG , BSC059N04LSG , BSC060N10NS3G , BSC060P03NS3EG , BSC067N06LS3G .

History: BSC0504NSI | BSC0501NSI | BSC010N04LS6

 

 

 

 

↑ Back to Top
.