BSC054N04NSG - описание и поиск аналогов

BSC054N04NS G OptiMOS 3 Power-Transistor Product Summary VDS 40 V Features Fast switching MOSFET for SMPS RDS(on),max 5.4 mW Optimized technology for DC/DC converters ID 81 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Su

BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM

BSC050N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 6.3 100% avalanche tested ID 80 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS

BSC050N10NS5 MOSFET SuperSO8 OptiMOSTM 5 Power-Transistor, 100 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 1 3 2 2 Halogen-free according to IEC61249-2-21 3 1 4 175 C rated Product Validation Qualified for

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n-Channel Power MOSFET OptiMOS BSC052N03LS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC052N03LS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS

BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

BSC059N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2

BSC059N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.9 mW Optimized technology for DC/DC converters ID 73 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

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n-Channel Power MOSFET OptiMOS BSC050NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC050NE2LS 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMO

BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

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BSC050N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V Fast switching MOSFET for SMPS RDS(on),max 5.0 mW Optimized technology for DC/DC converters ID 85 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) S

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0503NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

BSC050NE2LS OptiMOSTM Power-MOSFET Product Summary Features VDS 25 V Optimized for high performance Buck converter RDS(on),max 5.0 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 58 A 100% avalanche tested QGD 1.3 nC Superior thermal resistance QG(0V..10V) 10.4 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8

BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM

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BSC050N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5 mW Optimized technology for DC/DC converters ID 80 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio

BSC059N03S OptiMOS 2 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 5.5 m DS(on),max Optimized technology for notebook DC/DC converters I 50 A D Qualified according to JEDEC1 for target applications N-channel Logic level P-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0504NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0502NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC052N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 30 V BSC0501NSI SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Monolithic integrated Schottky-like diode Very low on-resis