BSC057N03MSG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC057N03MSG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.6 nS
Cossⓘ - Capacitancia de salida: 710 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: TDSON8
Búsqueda de reemplazo de BSC057N03MSG MOSFET
BSC057N03MSG Datasheet (PDF)
bsc057n03msg.pdf

BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
bsc057n03msg5.pdf

% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0D n) G S J57>>7@F 93F7 5:3D97 J BDA6G5F !* ( D n)1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD F:7
bsc057n03ms.pdf

BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
bsc057n03lsg.pdf

BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
Otros transistores... BSC050N03LSG , BSC050N03MSG , BSC050N04LSG , BSC050NE2LS , BSC052N03LS , BSC052N03SG , BSC054N04NSG , BSC057N03LSG , MMIS60R580P , BSC057N08NS3G , BSC059N03SG , BSC059N04LSG , BSC060N10NS3G , BSC060P03NS3EG , BSC067N06LS3G , BSC070N10NS3G , BSC072N03LDG .
History: SES760 | BSZ058N03LS | GP2M004A065XG | G50N03A | 2SK1602 | BF1107 | AP6900GH-HF
History: SES760 | BSZ058N03LS | GP2M004A065XG | G50N03A | 2SK1602 | BF1107 | AP6900GH-HF



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: MPT035N08S | MPT035N08P | MPG150N10S | MPG150N10P | MPG120N06S | MPG120N06P | MPG08N68S | MPG08N68P | MPF10N65 | MDT4N65 | MDT30P10D | MD70N10 | MD50N20 | MD25N50 | MD20N50 | MD100N20
Popular searches
2sa566 | bc559 equivalent | c2075 transistor | ecg123 | 2n5551 transistor equivalent | 13009 datasheet | 3dd15d transistor | pa110bda