All MOSFET. BSC057N03MSG Datasheet

 

BSC057N03MSG Datasheet and Replacement


   Type Designator: BSC057N03MSG
   Marking Code: 057N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 710 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: TDSON8
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BSC057N03MSG Datasheet (PDF)

 ..1. Size:525K  infineon
 bsc057n03msg.pdf pdf_icon

BSC057N03MSG

BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM

 0.1. Size:548K  infineon
 bsc057n03msg5.pdf pdf_icon

BSC057N03MSG

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 3.1. Size:486K  infineon
 bsc057n03ms.pdf pdf_icon

BSC057N03MSG

BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM

 5.1. Size:521K  infineon
 bsc057n03lsg.pdf pdf_icon

BSC057N03MSG

BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super

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Keywords - BSC057N03MSG MOSFET datasheet

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