BSC057N08NS3G Todos los transistores

 ..1. Size:587K  infineon
 bsc057n08ns3g.pdf

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 6.1. Size:486K  infineon
 bsc057n03ms.pdf

BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM

 6.2. Size:548K  infineon
 bsc057n03msg5.pdf

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 6.3. Size:521K  infineon
 bsc057n03lsg.pdf

BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

 6.4. Size:482K  infineon
 bsc057n03ls.pdf

BSC057N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 5.7 mW Optimized technology for DC/DC converters ID 71 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super

 6.5. Size:693K  infineon
 bsc057n03ls .pdf

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 6.6. Size:525K  infineon
 bsc057n03msg.pdf

BSC057N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 7.2 100% avalanche tested ID 71 A N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM