BSC057N08NS3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC057N08NS3G
Marking Code: 057N08NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 42
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 780
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0057
Ohm
Package:
TDSON8
BSC057N08NS3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC057N08NS3G
Datasheet (PDF)
..1. Size:587K infineon
bsc057n08ns3g.pdf 
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6.1. Size:486K infineon
bsc057n03ms.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
6.2. Size:548K infineon
bsc057n03msg5.pdf
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6.3. Size:521K infineon
bsc057n03lsg.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
6.4. Size:482K infineon
bsc057n03ls.pdf
BSC057N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 5.7 mW Optimized technology for DC/DC convertersID 71 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
6.5. Size:693K infineon
bsc057n03ls .pdf
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6.6. Size:525K infineon
bsc057n03msg.pdf
BSC057N03MS GOptiMOS3 M-Series Power-MOSFETProduct Summary FeaturesVDS 30 V Optimized for 5V driver application (Notebook, VGA, POL)RDS(on),max VGS=10 V 5.7 mW Low FOMSW for High Frequency SMPSVGS=4.5 V 7.2 100% avalanche testedID 71 A N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM
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