BSC070N10NS3G Todos los transistores

 ..1. Size:434K  infineon
 bsc070n10ns3g.pdf

BSC070N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 100 V Very low gate charge for high frequency applications RDS(on),max 7 mW Optimized for dc-dc conversion ID 90 A N-channel, normal level PG-TDSON-8 Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) 150 C operating temperature Pb-free lead plating;

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 bsc070n10ns3rev21.pdf

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 bsc070n10ns5.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 100 V BSC070N10NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

 3.2. Size:985K  infineon
 bsc070n10ns5sc.pdf

BSC070N10NS5SC MOSFET PG-WSON-8-2 OptiMOSTM 5 Power-Transistor, 100 V Features Double sided cooled package-with lowest Junction-top thermal resistance tab 175 C rated Optimized for high performance SMPS, e.g. sync. rec. 5 6 100% avalanche tested 7 8 Superior thermal resistance 4 3 N-channel 2 1 Pb-free lead plating; RoHS compliant Halogen-fr