BSC070N10NS3G - аналоги, даташиты, параметры транзистора

BSC070N10NS3G Datasheet (PDF)

..1. Size:434K infineon
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BSC070N10NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 100 V Very low gate charge for high frequency applicationsRDS(on),max 7mW Optimized for dc-dc conversionID 90 A N-channel, normal levelPG-TDSON-8 Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) 150 C operating temperature Pb-free lead plating;

2.1. Size:655K infineon
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% ! !% TM #:A0DQ ' 381>>5?B=1

3.1. Size:1175K infineon
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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 100 VBSC070N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal

3.2. Size:985K infineon
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BSC070N10NS5SCMOSFETPG-WSON-8-2OptiMOSTM 5 Power-Transistor, 100 VFeatures Double sided cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-fr

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