APT5014B2VR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT5014B2VR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 450 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Qgⓘ - Carga de la puerta: 234 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 737 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm
Paquete / Cubierta: TO247
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APT5014B2VR Datasheet (PDF)
apt5014b2vr.pdf
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
apt5014b2vrg.pdf
APT5014B2VR500V 37A 0.140POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lo
apt5014b2vfrg apt5014lvfrg.pdf
APT5014B2VFRAPT5014LVFR500V 37A 0.140B2VFR POWER MOS V FREDFETT-MAXTO-264Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt5014b2lc.pdf
APT5014B2LCAPT5014LLC500V 37A 0.140WB2LCTMPOWER MOS VIT-MAXPower MOS VITM is a new generation of low gate charge, high voltageTO-264N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,LLCdelivers exceptionally fast
Otros transistores... APT5010B2VFR , APT5010B2VR , APT5010JN , APT5010JVFR , APT5010JVR , APT5010LVFR , APT5010LVR , APT5012WVR , TK10A60D , APT5014LVR , APT5015BVR , APT5017BVFR , APT5017BVR , APT5017SVR , APT5019HVR , APT5020BN , APT5020BVFR .
Liste
Recientemente añadidas las descripciónes de los transistores:
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