APT5014B2VR Specs and Replacement

Type Designator: APT5014B2VR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 450 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 737 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO247

APT5014B2VR substitution

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APT5014B2VR datasheet

 ..1. Size:62K  apt
 apt5014b2vr.pdf pdf_icon

APT5014B2VR

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo... See More ⇒

 0.1. Size:55K  apt
 apt5014b2vrg.pdf pdf_icon

APT5014B2VR

APT5014B2VR 500V 37A 0.140 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lo... See More ⇒

 4.1. Size:114K  apt
 apt5014b2vfrg apt5014lvfrg.pdf pdf_icon

APT5014B2VR

APT5014B2VFR APT5014LVFR 500V 37A 0.140 B2VFR POWER MOS V FREDFET T-MAX TO-264 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 5.1. Size:33K  apt
 apt5014b2lc.pdf pdf_icon

APT5014B2VR

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC TM POWER MOS VI T-MAX Power MOS VITM is a new generation of low gate charge, high voltage TO-264 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, LLC delivers exceptionally fast ... See More ⇒

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Detailed specifications: APT5010B2VFR, APT5010B2VR, APT5010JN, APT5010JVFR, APT5010JVR, APT5010LVFR, APT5010LVR, APT5012WVR, SKD502T, APT5014LVR, APT5015BVR, APT5017BVFR, APT5017BVR, APT5017SVR, APT5019HVR, APT5020BN, APT5020BVFR

Keywords - APT5014B2VR MOSFET specs

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