BSC109N10NS3G Todos los transistores

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Type BSC100N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 10 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli... See More ⇒

% ! !% D # A0 D Q ' 381>>5?B=1... See More ⇒

BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒

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BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒

& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- 1 m D n) m x 44 Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8... See More ⇒

pe % ! % TM # A0A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ $ 7@C E2C86E 2AA= 42E @?D R ... See More ⇒