BSC109N10NS3G Specs and Replacement
Type Designator: BSC109N10NS3G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 63 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
Package: TDSON8
BSC109N10NS3G substitution
- MOSFET ⓘ Cross-Reference Search
BSC109N10NS3G datasheet
bsc109n10ns3 bsc109n10ns3g.pdf
% ! !% TM # A0 D Q ' 381>>5?B=1... See More ⇒
bsc100n06ls3g.pdf
Type BSC100N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 60 V Ideal for high frequency switching and sync. rec. RDS(on),max 10 mW Optimized technology for DC/DC converters ID 50 A Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance N-channel, logic level 100% avalanche tested Pb-free plating; RoHS compli... See More ⇒
bsc100n10nsf8 bsc100n10nsfg.pdf
% ! !% D # A0 D Q ' 381>>5?B=1... See More ⇒
bsc100n03msg.pdf
BSC100N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features VDS 30 V Optimized for 5V driver application (Notebook, VGA, POL) RDS(on),max VGS=10 V 10 mW Low FOMSW for High Frequency SMPS VGS=4.5 V 12 100% avalanche tested ID 44 A PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) DS... See More ⇒
Detailed specifications: BSC090N03MSG, BSC093N04LSG, BSC094N03SG, BSC100N03LSG, BSC100N03MSG, BSC100N06LS3G, BSC100N10NSFG, BSC105N10LSFG, IRFB4110, BSC110N06NS3G, BSC118N10NSG, BSC119N03SG, BSC120N03LSG, BSC120N03MSG, BSC123N08NS3G, BSC123N10LSG, BSC12DN20NS3G
Keywords - BSC109N10NS3G MOSFET specs
BSC109N10NS3G cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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