BSC12DN20NS3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC12DN20NS3G 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4 nS
Cossⓘ - Capacitancia de salida: 39 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Encapsulados: TDSON8
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BSC12DN20NS3G datasheet
bsc12dn20ns3 bsc12dn20ns3g.pdf
Type BSC12DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 125 m N-channel, normal level ID 11.3 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
bsc120n03lsg.pdf
BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi
bsc120n03msg.pdf
BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)
bsc120n03ms.pdf
BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)
Otros transistores... BSC109N10NS3G, BSC110N06NS3G, BSC118N10NSG, BSC119N03SG, BSC120N03LSG, BSC120N03MSG, BSC123N08NS3G, BSC123N10LSG, IRFB4115, BSC130P03LSG, BSC150N03LDG, BSC152N10NSFG, BSC159N10LSFG, BSC160N10NS3G, BSC16DN25NS3G, BSC190N12NS3G, BSC190N15NS3G
Parámetros del MOSFET. Cómo se afectan entre sí.
History: JMTG060P03A | PJA3460 | JMTG080P03A | VBE1638 | SRN1860F | DH100P28B | AONR36321
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