BSC12DN20NS3G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BSC12DN20NS3G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm

Encapsulados: TDSON8

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BSC12DN20NS3G datasheet

 ..1. Size:308K  infineon
bsc12dn20ns3 bsc12dn20ns3g.pdf pdf_icon

BSC12DN20NS3G

Type BSC12DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 125 m N-channel, normal level ID 11.3 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)

 9.1. Size:520K  infineon
bsc120n03lsg.pdf pdf_icon

BSC12DN20NS3G

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi

 9.2. Size:524K  infineon
bsc120n03msg.pdf pdf_icon

BSC12DN20NS3G

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

 9.3. Size:485K  infineon
bsc120n03ms.pdf pdf_icon

BSC12DN20NS3G

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM)

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