BSC12DN20NS3G Todos los transistores

Type BSC12DN20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 200 V Optimized for dc-dc conversion RDS(on),max 125 m N-channel, normal level ID 11.3 A Excellent gate charge x R product (FOM) DS(on) Low on-resistance R DS(on) PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) ... See More ⇒

BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) ... See More ⇒

BSC120N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary VDS 30 V Features RDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL) VGS=4.5 V 14 Low FOMSW for High Frequency SMPS ID 39 A 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (FOM) ... See More ⇒

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BSC120N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 12 mW Optimized technology for DC/DC converters ID 39 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superi... See More ⇒

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$ $ C "9@/; %;+877+;B Features D Q #4513I CG9D389>7 1>4 CI>3 B53 1 m D n) m x Q ( @D9=9J54 D538>?F5BD5BC D Q H35>5?B=1... See More ⇒