BSC12DN20NS3G
MOSFET. Datasheet pdf. Equivalent
Type Designator: BSC12DN20NS3G
Marking Code: 12DN20NS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 11.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.5
nC
trⓘ - Rise Time: 4
nS
Cossⓘ -
Output Capacitance: 39
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125
Ohm
Package:
TDSON8
BSC12DN20NS3G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BSC12DN20NS3G
Datasheet (PDF)
..1. Size:308K infineon
bsc12dn20ns3 bsc12dn20ns3g.pdf 
TypeBSC12DN20NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 200 V Optimized for dc-dc conversionRDS(on),max 125m N-channel, normal levelID 11.3 A Excellent gate charge x R product (FOM)DS(on) Low on-resistance RDS(on)PG-TDSON-8 150 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1)
9.1. Size:520K infineon
bsc120n03lsg.pdf
BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
9.2. Size:524K infineon
bsc120n03msg.pdf
BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
9.3. Size:485K infineon
bsc120n03ms.pdf
BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
9.4. Size:686K infineon
bsc120n03ls .pdf
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9.5. Size:481K infineon
bsc120n03ls.pdf
BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
9.6. Size:678K infineon
bsc120n03msg7.pdf
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9.7. Size:675K infineon
bsc123n10ls8 bsc123n10lsg.pdf
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9.8. Size:589K infineon
bsc123n08ns3g.pdf
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