BSC152N10NSFG Todos los transistores

 

BSC152N10NSFG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BSC152N10NSFG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0152 Ohm
   Paquete / Cubierta: TDSON8

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BSC152N10NSFG Datasheet (PDF)

 2.1. Size:665K  infineon
bsc152n10nsf8.pdf

BSC152N10NSFG
BSC152N10NSFG

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 9.1. Size:1163K  infineon
bsc155n06nd.pdf

BSC152N10NSFG
BSC152N10NSFG

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis

 9.2. Size:317K  infineon
bsc150n03ld.pdf

BSC152N10NSFG
BSC152N10NSFG

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.3. Size:589K  infineon
bsc150n03ld .pdf

BSC152N10NSFG
BSC152N10NSFG

% ! D #:A0

 9.4. Size:319K  infineon
bsc150n03ldg.pdf

BSC152N10NSFG
BSC152N10NSFG

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.5. Size:666K  infineon
bsc159n10lsf9 bsc159n10lsfg.pdf

BSC152N10NSFG
BSC152N10NSFG

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