BSC152N10NSFG Datasheet and Replacement
Type Designator: BSC152N10NSFG
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 470 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0152 Ohm
Package: TDSON8
BSC152N10NSFG substitution
BSC152N10NSFG Datasheet (PDF)
bsc155n06nd.pdf

BSC155N06NDMOSFETPG-TDSON-8-4OptiMOSTM-T2 Power Transistor, 60 V8 17Features 26354 Dual N-channel,Normal Level Fast switching MOSFETs 175C operating temperature Green product (RoHS compliant)182 7 100% Avalanche tested3 654 Optimized technology for drives applications Halogen-free according to IEC61249-2-21 Superior thermal resis
bsc150n03ld.pdf

BSC150N03LD GOptiMOS3 Power-TransistorsProduct SummaryFeaturesV 30 VDS Dual N-channel, logic levelR 15mDS(on),max Fast switching MOSFETs for SMPSI 20 ADPG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on
Datasheet: BSC119N03SG , BSC120N03LSG , BSC120N03MSG , BSC123N08NS3G , BSC123N10LSG , BSC12DN20NS3G , BSC130P03LSG , BSC150N03LDG , IRF630 , BSC159N10LSFG , BSC160N10NS3G , BSC16DN25NS3G , BSC190N12NS3G , BSC190N15NS3G , BSC196N10NSG , BSC200P03LSG , BSC205N10LSG .
History: FDT3612 | 2N80L-TF2-T | APM9988QB | JMTQ4407A | NTJS3157NT2 | 4N70KG-TM3-T | SVSP7N70DD2TR
Keywords - BSC152N10NSFG MOSFET datasheet
BSC152N10NSFG cross reference
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BSC152N10NSFG lookup
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History: FDT3612 | 2N80L-TF2-T | APM9988QB | JMTQ4407A | NTJS3157NT2 | 4N70KG-TM3-T | SVSP7N70DD2TR



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