BSL307SP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Rev 1.2 BSL307SP OptiMOS -P Small-Signal-Transistor Product Summary Feature VDS -30 V P-Channel RDS(on) 43 m Enhancement mode ID -5.5 A Logic Level PG-TSOP-6-1 150 C operating temperature Avalanche rated dv/dt rated 4 3 5 2 6 1 Drain pin 1,2, 5,6 Gate pin 3 Type Package Tape and reel Marking Source BSL307SP PG-TSOP-6-1 L63

BSL307SP www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Ch

BSL308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features VDS -30 V Dual P-channel RDS(on),max VGS=-10 V 80 mW Enhancement mode VGS=-4.5 V 130 Logic level (4.5V rated) ID -2.0 A ESD protected PG-TSOP-6 Qualified according to AEC Q101 6 5 4 100% Lead-free; RoHS compliant Halogen free according to IEC61249-2-21 1 2 3 Ty

BSL306N $=@6"$'F ' .99 '64;.9 (>.;?6?@ %>E Features 0 V DS T H5@ ) 7

BSL302SN OptiMOS 2 Small-Signal-Transistor Product Summary Features V 30 V DS N-channel R V =10 V 25 m DS(on),max GS Enhancement mode V =4.5 V 38 GS Logic level (4.5V rated) I 7.1 A D Avalanche rated dv /dt rated PG-TSOP-6 Pb-free lead plating; RoHS compliant 6 5 Qualified according to AEC Q101 4 1 2 3 Type Package Tape and Reel Informa

Mosfet Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, -30V BSL305SPE Data Sheet Rev. 2.0 Final Industrial & Multimarket BSL305SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features VDS -30 V P-channel RDS(on),max VGS=-10 V 45 m Enhancement mode VGS=-4.5 V 80 Logic level (4.5V rated) ID -5.3 A ESD protected

BSL308C OptiMOS P3 + Optimos 2 Small Signal Transistor Product Summary Features Complementary P + N channel P N Enhancement mode VDS -30 30 V Logic level (4.5V rated) RDS(on),max VGS= 10 V 80 57 mW Avalanche rated VGS= 4.5 V 130 93 ID -2.0 2.3 A Qualified according to AEC Q101 100% Lead-free; RoHS compliant PG-TSOP-6 Halogen free according

Mosfet Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, -30V BSL303SPE Data Sheet Rev. 2.0 Final Industrial & Multimarket BSL303SPE OptiMOS -P 3 Small-Signal-Transistor Product Summary Features VDS -30 V P-channel RDS(on),max VGS=-10 V 33 m Enhancement mode VGS=-4.5 V 52 Logic level (4.5V rated) ID -6.3 A ESD protected